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Spike-Timing-Dependent-Plasticity Device With Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method

This version is not peer-reviewed.

Hidehito Kita,Kazuma Uno,

Tokiyoshi Matsuda,

Hidenori Kawanishi,

Mutsumi Kimura^*

Hidehito Kita,Kazuma Uno,

Tokiyoshi Matsuda,

Hidenori Kawanishi,

Mutsumi Kimura^*

This version is not peer-reviewed.

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