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Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate
Version 1
: Received: 22 May 2024 / Approved: 22 May 2024 / Online: 22 May 2024 (11:07:28 CEST)
How to cite: Zhao, Z.; Zhao, L.; Peng, Y. Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate. Preprints 2024, 2024051427. https://doi.org/10.20944/preprints202405.1427.v1 Zhao, Z.; Zhao, L.; Peng, Y. Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate. Preprints 2024, 2024051427. https://doi.org/10.20944/preprints202405.1427.v1
Abstract
Silicon carbide single crystal (SiC) has been widely used in the field of power devices, while it is difficult to fabricate ultra-flat surface by traditional manufacturing technologies due to its difficult-to-machine property. This paper investigates the interaction process during femtosecond laser ablation of crystalline silicon carbide based on the two-temperature model simulation and experimental study. The findings reveal that parameters such as laser pulse energy, scanning interval, and defocus amount exert significant influence on ablation depth, roughness, and surface morphology. The femtosecond laser proves effective in removing surface defects from cut SiC substrates, albeit resulting in increased surface roughness. However, subsequent polishing treatment of the laser-ablated silicon carbide surface can mitigate this roughness, underscoring the feasibility of laser surface ablation for silicon carbide single crystals.
Keywords
femtosecond laser; simulation; surface polish
Subject
Engineering, Industrial and Manufacturing Engineering
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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