Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Revealing the Impact of Ga/Y Doping on the Thermal and Electrical Behavior in LaMnO3 Ceramics Materials

Version 1 : Received: 18 January 2024 / Approved: 18 January 2024 / Online: 19 January 2024 (09:09:02 CET)

A peer-reviewed article of this Preprint also exists.

Vlazan, P.; Marin, C.N.; Malaescu, I.; Vlase, G.; Vlase, T.; Poienar, M.; Sfirloaga, P. Revealing the Impact of Ga and Y Doping on Thermal and Electrical Behavior of LaMnO3 Ceramic Materials. Appl. Sci. 2024, 14, 1546. Vlazan, P.; Marin, C.N.; Malaescu, I.; Vlase, G.; Vlase, T.; Poienar, M.; Sfirloaga, P. Revealing the Impact of Ga and Y Doping on Thermal and Electrical Behavior of LaMnO3 Ceramic Materials. Appl. Sci. 2024, 14, 1546.

Abstract

In this work, we report a series of undoped and 1% Ga or Y doped lanthanum manganite compounds which have been synthesized via sol-gel technique. The obtained materials were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and scanning electron microscopy (SEM/EDX). The XRD results confirmed a good crystallinity for all the studied samples and a change in the crystal structure of Ga or Y doped lanthanum manganite (Pm-3m space group) is observed compared to pristine sample (R-3c space group). Thermal analysis highlighted a different behavior of the doped samples compared to the undoped sample observed by the different mass loss in the analyzed temperature range. For these materials, it is shown for the first time that the static electrical conductivity, σDC of Ga or Y doped LaMnO3 compounds increases compared to the σDC pristine sample, and the thermal activation energy of the conduction EA,cond increases linearly with the temperature, for all three studied sample.

Keywords

doping; sol-gel technique; structural analysis; electrical properties.

Subject

Chemistry and Materials Science, Ceramics and Composites

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