Wang, S.; Lu, Z.; Xu, K.; Dai, H.; Wu, Z.; Yu, X. A Sub-1-V Nanopower MOS-Only Voltage Reference. J. Low Power Electron. Appl.2024, 14, 13.
Wang, S.; Lu, Z.; Xu, K.; Dai, H.; Wu, Z.; Yu, X. A Sub-1-V Nanopower MOS-Only Voltage Reference. J. Low Power Electron. Appl. 2024, 14, 13.
Wang, S.; Lu, Z.; Xu, K.; Dai, H.; Wu, Z.; Yu, X. A Sub-1-V Nanopower MOS-Only Voltage Reference. J. Low Power Electron. Appl.2024, 14, 13.
Wang, S.; Lu, Z.; Xu, K.; Dai, H.; Wu, Z.; Yu, X. A Sub-1-V Nanopower MOS-Only Voltage Reference. J. Low Power Electron. Appl. 2024, 14, 13.
Abstract
A novel low-power MOS-only voltage reference is presented. The Enz-Krummenacher-Vittoz (EKV) model is adopted to provide a new perspective on the operating principle. The normalized charge density, introduced as a new variable, serves as an indicator when trimming the output temperature coefficient. The proposed voltage reference consists of a specific current generator and a 5-bit trimmable load. Thanks to the well-match between the current source stage and the output stage, the non-linear temperature dependence of carrier mobility is automatically canceled out. The circuit is designed in 55 nm COMS technology. The operating temperature ranges from -40 ∘C to 120 ∘C. The average temperature coefficient of the output voltage can be reduced to 21.7 ppm/∘C by trimming. The power consumption is only 23.2 nW with a supply voltage of 0.8 V. The line sensitivity and the power supply rejection ratio at 100 Hz are 0.011 %/V and -89 dB respectively.
Keywords
voltage reference; MOS-only; low power; low voltage; sub-threshold
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
