Article
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A Thermoelectric Polymer Field-effect Transistor via Iodine-doped P3HT
Version 1
: Received: 21 December 2023 / Approved: 22 December 2023 / Online: 22 December 2023 (12:32:44 CET)
A peer-reviewed article of this Preprint also exists.
Norman, J.W.; Sun, S.-S. A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT. Micromachines 2024, 15, 172. Norman, J.W.; Sun, S.-S. A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT. Micromachines 2024, 15, 172.
Abstract
Doping can alter the electronic and thermoelectric attributes of an organic semiconductor system. These alterations can enable viable tunable devices that have applications in temperature sensing for environmental controls. Here we demonstrate a dual-modulation organic field-effect transistor (OFET) where temperature effectively modulates the current-voltage characteristics of the OFET and gate voltage modulates the thermoelectric properties of the active layer. Poly(3-hexylthiophene-2,5-diyl) (P3HT) was utilized as the host donor polymer, iodine was utilized as the dopant acceptor molecule Finished devices were characterized by a semiconductor analyzer system with temperature controlled by two thermoelectric cooling plates. The doping of iodine in the range of 0.25% to 0.5% mole ratio with respect to the P3HT exhibited the greatest on-off ratio of the investigated dopant concentrations. Iodine doping concentrations of 0.5% mole ratio or less can greatly improve the thermoelectric properties of a binary P3HT-based system and the current-voltage performance of the dual-modulation device.
Keywords
Field effect transistors FET; thermoelectric; power factor; polymers; doping
Subject
Chemistry and Materials Science, Materials Science and Technology
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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