Kwon, M.J.; Lee, H.; Jung, J.Y.; Yu, J.-W. Effects of Doped Hole-Transporting Layers on Perovskite Solar Cell Performances. Appl. Sci.2024, 14, 83.
Kwon, M.J.; Lee, H.; Jung, J.Y.; Yu, J.-W. Effects of Doped Hole-Transporting Layers on Perovskite Solar Cell Performances. Appl. Sci. 2024, 14, 83.
Kwon, M.J.; Lee, H.; Jung, J.Y.; Yu, J.-W. Effects of Doped Hole-Transporting Layers on Perovskite Solar Cell Performances. Appl. Sci.2024, 14, 83.
Kwon, M.J.; Lee, H.; Jung, J.Y.; Yu, J.-W. Effects of Doped Hole-Transporting Layers on Perovskite Solar Cell Performances. Appl. Sci. 2024, 14, 83.
Abstract
The influences of doped hole transporting layer (HTL) on the performances of perovskite solar cells were studied. The influences of electrostatic and surface roughness effect by solvent additive doping were compared. The electrostatic effect of solvent additive doping was compared by addition of 1,8-diiodooctane and 1,8-dichlorooctane to the HTL layer. The surface roughness effect of solvent additive doping was examined using atomic force microscopy. The perovskite crystallinity by doping HTL was studied by X-ray diffraction. The conductivity of HTL was measured using four probe methods and was higher for doped devices. Enhanced conductivity of PEDOT:PSS film was also proved using fluorescence emission quenching. Long-term stability of the device was enhanced by doping HTL. The device with solvent additive exhibited much enhanced stability, retained over 80% of the initial PCE for 400 hours, while PCE of the device without solvent additive decreased to less than 80% after 200 hours. A very weak power microwave treatment was used for post-annealing of the fully fabricated devices. Post-annealing enhanced the lifetime of the device. Comparing different size of cells, the device lifetime was decreased as the cell area increased and as the size of the cell increased, the extent of lifetime enhancement by doping was increased.
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