A Comparison of GaN Transistors to MOSFETs for Active Magnetic Levitation

Alexander H. Pesch; Nyandieka H. Aboki; Jairo E. Villamizar-Vasquez; Frank Li; Vamsi Borra

doi:10.20944/preprints202311.1723.v1

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A Comparison of GaN Transistors to MOSFETs for Active Magnetic Levitation

This version is not peer-reviewed.

Alexander H. Pesch^*,Nyandieka H. Aboki,

Jairo E. Villamizar-Vasquez,Frank Li,

Vamsi Borra

Alexander H. Pesch^*,Nyandieka H. Aboki,

Jairo E. Villamizar-Vasquez,Frank Li,

Vamsi Borra

This version is not peer-reviewed.

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Submitted:

25 November 2023

Posted:

27 November 2023

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Engineering - Electrical and Electronic Engineering

This preprints belongs to the Topic

Advances in Microelectronics and Semiconductor Engineering

Copyright: This open access article is published under a Creative Commons CC BY 4.0 license, which permit the free download, distribution, and reuse, provided that the author and preprint are cited in any reuse.

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A Comparison of GaN Transistors to MOSFETs for Active Magnetic Levitation

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