Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

A Comparative Study of n- and p- Channel FeFETs with Ferroelectric HZO Gate Dielectric

Paul Jacob
,
Pooja Chandrashekar Patil
,
Shan Deng
,
Kai Ni
,
Khushwant Sehra
ORCID logo ,
Mridula Gupta
,
Manoj Saxena
,
David MacMahon
,
Santosh Kurinec
*
Version 1 : Received: 6 October 2023 / Approved: 9 October 2023 / Online: 10 October 2023 (12:22:45 CEST)

A peer-reviewed article of this Preprint also exists.

Jacob, P.; Patil, P.C.; Deng, S.; Ni, K.; Sehra, K.; Gupta, M.; Saxena, M.; MacMahon, D.; Kurinec, S. A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric. Solids 2023, 4, 356-367. Jacob, P.; Patil, P.C.; Deng, S.; Ni, K.; Sehra, K.; Gupta, M.; Saxena, M.; MacMahon, D.; Kurinec, S. A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric. Solids 2023, 4, 356-367.

Abstract

This study investigates the electrical characteristics observed in n- channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the gate dielectric. The n-FeFETs demonstrate a faster complete polarization switching compared to the p-channel counterparts. Detailed and systematic investigations using TCAD simulations reveal the role of fixed charges and interface traps at the HZO-interfacial layer (HZO/IL) interface in modulating the subthreshold characteristics of the devices. A characteristic crossover point observed in the transfer characteristics of n-channel devices is attributed with the temporary switching between ferroelectric-based operation to charge-based operation, caused by the pinning effect due to the presence of different traps. This experimental study helps understand the role of charge trapping effects in switching characteristics of n- and p-channel ferroelectric FETs.

Keywords

ferroelectric; FeFETs; HZO; polarization; charge trapping

Subject

Engineering, Electrical and Electronic Engineering

Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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