A MSM Visible-near-Infrared Wavelength Photodetector Based on PbS Quantum Dots/Porous Silicon Hybrid Structure

Yunlai He; Xuanzhang Li; Junyang Zhang; Zhendong Gao; Xinxin Li; Jiale Liu; Zhen Deng; Xiuyun Lei; Chunhua Du; Yang Jiang; Haiqiang Jia; Wenxin Wang; Hong Chen

doi:10.20944/preprints202309.1032.v1

Preprint Communication Version 1 Preserved in Portico This version is not peer-reviewed

Version 1 : Received: 14 September 2023 / Approved: 14 September 2023 / Online: 15 September 2023 (11:10:30 CEST)

porous silicon-based photodetectors have attracted more researches due to their high luminous efficiency, good stability and low cost. In this paper, a PbS quantum dots/porous silicon hybrid structure has been fabricated. The PbS quantum dots (QDs) partly infiltrated into the porous silicon (PSi) layer and partly deposited on its surface, which could increase the absorption of near-infrared wavelength range and extend the light absorption in silicon for wavelengths longer than 1100 nm. After that, A metal-semiconductor-metal (MSM) device is fabricated and its response spectrum could extend to the 1200 nm at -3 V. As a silicon-based photodetector (PD), one can envision its role for operation from visible light to short-wavelength infrared range.

porous silicon; quantum dots; near-infrared

Chemistry and Materials Science, Materials Science and Technology

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A MSM Visible-near-Infrared Wavelength Photodetector Based on PbS Quantum Dots/Porous Silicon Hybrid Structure

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