Mirbeik, A.; Najafizadeh, L.; Ebadi, N. A Synthetic Ultra-Wideband Transceiver for Millimeter-Wave Imaging Applications. Micromachines2023, 14, 2031.
Mirbeik, A.; Najafizadeh, L.; Ebadi, N. A Synthetic Ultra-Wideband Transceiver for Millimeter-Wave Imaging Applications. Micromachines 2023, 14, 2031.
Mirbeik, A.; Najafizadeh, L.; Ebadi, N. A Synthetic Ultra-Wideband Transceiver for Millimeter-Wave Imaging Applications. Micromachines2023, 14, 2031.
Mirbeik, A.; Najafizadeh, L.; Ebadi, N. A Synthetic Ultra-Wideband Transceiver for Millimeter-Wave Imaging Applications. Micromachines 2023, 14, 2031.
Abstract
In this work, we present a transceiver front-end in SiGe BiCMOS technology that can provide an ultra-wide bandwidth of 100 GHz at millimeter-wave frequencies. The front-end employs a novel configuration for low-loss distribution of broadband generated pulses as well as coherent spatial combining of received pulses. This leads to the realization of a fully integrated ultra-high-resolution imaging chip for biomedical applications. We realized an ultra-wide imaging bandwidth of 100 GHz by the integration of two adjacent, disjointed frequency sub-bands of 10–50 GHz and 50–110 GHz respectively. The transceiver front-end is capable of both transmit (TX) and receive (RX) operations. This is a key building-block for a scalable system in which a unit cell is repeated in the X and Y directions resulting in less power and area consumption. The imaging elements were designed and fabricated in Global Foundry 130-nm SiGe 8XP BiCMOS process technology.
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
