Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Energy Gap-Refractive Index Relations in Semiconductors − Using Wemple-DiDomenico model to unify Moss, Ravindra, and Herve-Vandamme Relationships

Version 1 : Received: 9 August 2023 / Approved: 10 August 2023 / Online: 11 August 2023 (02:56:13 CEST)

A peer-reviewed article of this Preprint also exists.

Lamichhane, A. Energy-Gap-Refractive Index Relations in Semiconductors—Using Wemple–DiDomenico Model to Unify Moss, Ravindra, and Herve–Vandamme Relationships. Solids 2023, 4, 316-326. Lamichhane, A. Energy-Gap-Refractive Index Relations in Semiconductors—Using Wemple–DiDomenico Model to Unify Moss, Ravindra, and Herve–Vandamme Relationships. Solids 2023, 4, 316-326.

Abstract

The refractive index of solids guages their transparency to incident light, while the energy gap determines the threshold for light absorption. This paper provides a mathematical formulation for the relationship between refractive index and energy gap. It is also established that this formulation aided in the unification of the Moss, Ravindra, and Herve-Vandamme relationships.

Keywords

energy gap; refractive index; Moss, Ravindra, Herve-Vandamme relationships; Wemple and DiDomenico single oscillator model

Subject

Physical Sciences, Optics and Photonics

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