Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Improving the Luminescence Performance of Monolayers MoS2 by Doping Multiple Metal Elements with CVT Method

Version 1 : Received: 3 August 2023 / Approved: 3 August 2023 / Online: 3 August 2023 (10:32:42 CEST)

A peer-reviewed article of this Preprint also exists.

Zhao, B.; Huo, Z.; Li, L.; Liu, H.; Hu, Z.; Wu, Y.; Qiu, H. Improving the Luminescence Performance of Monolayer MoS2 by Doping Multiple Metal Elements with CVT Method. Nanomaterials 2023, 13, 2520. Zhao, B.; Huo, Z.; Li, L.; Liu, H.; Hu, Z.; Wu, Y.; Qiu, H. Improving the Luminescence Performance of Monolayer MoS2 by Doping Multiple Metal Elements with CVT Method. Nanomaterials 2023, 13, 2520.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, it remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, Dy) into the monolayers MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced fluorescence and carrier effect. This work provides a growth method for doping nonlike elements into 2D MoS2 and potentially many other 2D materials to modify their properties.

Keywords

Doping; MoS2; CVT

Subject

Chemistry and Materials Science, Materials Science and Technology

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