Preprint Review Version 2 Preserved in Portico This version is not peer-reviewed

Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications

Version 1 : Received: 2 August 2023 / Approved: 3 August 2023 / Online: 3 August 2023 (10:30:25 CEST)
Version 2 : Received: 15 August 2023 / Approved: 16 August 2023 / Online: 17 August 2023 (07:53:02 CEST)

A peer-reviewed article of this Preprint also exists.

Anttu, N. Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications. Crystals 2023, 13, 1292. Anttu, N. Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications. Crystals 2023, 13, 1292.

Abstract

Vertical III-V semiconductor nanowires have shown promising absorption of light for solar cell and photodetector applications. The absorption properties can be tuned through the choice of III-V materials and geometry of the nanowires. Here, we review recent progress in the design of the absorption properties of both individual nanowires and nanowire arrays. Future directions for the research field are proposed.

Keywords

III-V semiconductor; nanowire; absorption; solar cell; photodetector

Subject

Physical Sciences, Applied Physics

Comments (1)

Comment 1
Received: 17 August 2023
Commenter: Nicklas Anttu
Commenter's Conflict of Interests: Author
Comment: Revised version, with addition of Figure 1c, Figure 1d, Figure 5, and Figure 6 as main changes.
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