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“GeSn Rule-23”-the Performance Limit of GeSn Infrared Photodiodes
Version 1
: Received: 21 July 2023 / Approved: 21 July 2023 / Online: 21 July 2023 (08:42:16 CEST)
A peer-reviewed article of this Preprint also exists.
Chang, G.-E.; Yu, S.-Q.; Sun, G. “GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes. Sensors 2023, 23, 7386. Chang, G.-E.; Yu, S.-Q.; Sun, G. “GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes. Sensors 2023, 23, 7386.
Abstract
Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal-oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications. The performance of GeSn PDs is highly dependent on the Sn composition and operation temperature. Here, we develop theoretical models to establish a simple rule of thumb, namely “GeSn-rule 23”, to describe GeSn PDs’ dark current density in terms of operation temperature, cutoff wavelength, and Sn composition. In addition, analysis of GeSn PDs’ performance shows that the responsivity, detectivity, and bandwidth are highly dependent on operation temperature. This rule provides a simple and convenient indicator for device developers to estimate the device performance at various conditions for practical applications.
Keywords
dark current; GeSn alloys; infrared; responsivity; silicon photonics; CMOS; sustainability
Subject
Engineering, Electrical and Electronic Engineering
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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