Sánchez Vergara, M.E.; Cantera Cantera, L.A.; Rios, C.; Salcedo, R.; Lozada Flores, O.; Dutt, A. Preparation of Hybrid Films Based in Aluminum 8-Hydroxyquinoline as Organic Semiconductor for Photoconductor Applications. Sensors2023, 23, 7708.
Sánchez Vergara, M.E.; Cantera Cantera, L.A.; Rios, C.; Salcedo, R.; Lozada Flores, O.; Dutt, A. Preparation of Hybrid Films Based in Aluminum 8-Hydroxyquinoline as Organic Semiconductor for Photoconductor Applications. Sensors 2023, 23, 7708.
Sánchez Vergara, M.E.; Cantera Cantera, L.A.; Rios, C.; Salcedo, R.; Lozada Flores, O.; Dutt, A. Preparation of Hybrid Films Based in Aluminum 8-Hydroxyquinoline as Organic Semiconductor for Photoconductor Applications. Sensors2023, 23, 7708.
Sánchez Vergara, M.E.; Cantera Cantera, L.A.; Rios, C.; Salcedo, R.; Lozada Flores, O.; Dutt, A. Preparation of Hybrid Films Based in Aluminum 8-Hydroxyquinoline as Organic Semiconductor for Photoconductor Applications. Sensors 2023, 23, 7708.
Abstract
In the present work we have investigated an organic semiconductor based on tris(8-hydroxyquinoline) aluminum (AlQ3) doped with tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic light-emitting device (OLED). DFT calculations were carried out to optimize the structure of semiconductor species and get related constants in order to compare experimental and theoretical results. The semiconductor AlQ3-TCNQ was structurally characterized and their experimental IR spectrum was compared with that obtained through DFT calculations. Subsequently, AlQ3-TCNQ films with polypyrrole (PPy) matrix were fabricated, they were morphologically and mechanically characterized by Scanning Electron and Atomic Force Microscopy techniques. The maximum stress for the film is 8.66 MPa and the Knoop hardness is 0.0311. The film was analyzed in its optical behavior and the optical properties of hybrid film were found to exhibit two indirect allowed transitions at 2.64 and 3.44 eV. Finally, an OLED type was fabricated that was electrically characterized. Applying a cubic-spline approximation to fit cubic polynomials to the J-V curves, the ohmic to SCLC transition voltage VON and the trap-filled-limit voltage VTFL for the device were obtained. Then, the free carrier density and trap density for the device were approximated to n0=2.4787×10171m3 and Nt=1.7419×10291m3 respectively.
Chemistry and Materials Science, Electronic, Optical and Magnetic Materials
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