Delimova, L.; Seregin, D.; Orlov, G.; Zaitseva, N.; Gushchina, E.; Sigov, A.; Vorotilov, K. Porous PZT Films: How Can We Tune Electrical Properties? Materials2023, 16, 5171.
Delimova, L.; Seregin, D.; Orlov, G.; Zaitseva, N.; Gushchina, E.; Sigov, A.; Vorotilov, K. Porous PZT Films: How Can We Tune Electrical Properties? Materials 2023, 16, 5171.
Delimova, L.; Seregin, D.; Orlov, G.; Zaitseva, N.; Gushchina, E.; Sigov, A.; Vorotilov, K. Porous PZT Films: How Can We Tune Electrical Properties? Materials2023, 16, 5171.
Delimova, L.; Seregin, D.; Orlov, G.; Zaitseva, N.; Gushchina, E.; Sigov, A.; Vorotilov, K. Porous PZT Films: How Can We Tune Electrical Properties? Materials 2023, 16, 5171.
Abstract
Porous ferroelectric lead zirconate-titanate (PZT) films are a promising material for various electronics applications. This study focuses on understanding how structure-directing agent (polyvinylpyrrolidone) can change structure and electrical properties of porous PZT films prepared by chemical solution deposition. The films with various porosity up to ~ 40 vol.% and pore connectivity changing from 3-0 to 3-3 were prepared and studied by capacitance-voltage, dielectric hysteresis, transient current, photocurrent, and local current techniques. We have found that the linear decrease in the material volume in a porous film is not the only factor governing film properties. The key role in changing electrical properties plays the creation of new internal grain boundaries. This research expands the understanding of physical phenomena in porous ferroelectric films and may enable the development of new materials and devices.
Keywords
ferroelectric film; lead zirconate-titanate; chemical solution deposition; porosity; polarization; porous boundary; local current
Subject
Chemistry and Materials Science, Surfaces, Coatings and Films
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
