Version 1
: Received: 31 May 2023 / Approved: 2 June 2023 / Online: 2 June 2023 (10:03:28 CEST)
How to cite:
Kotousova, I.S.; Lebedev, S.P.; Antipov, V.V.; Lebedev, A.A. Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction. Preprints2023, 2023060138. https://doi.org/10.20944/preprints202306.0138.v1
Kotousova, I.S.; Lebedev, S.P.; Antipov, V.V.; Lebedev, A.A. Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction. Preprints 2023, 2023060138. https://doi.org/10.20944/preprints202306.0138.v1
Kotousova, I.S.; Lebedev, S.P.; Antipov, V.V.; Lebedev, A.A. Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction. Preprints2023, 2023060138. https://doi.org/10.20944/preprints202306.0138.v1
APA Style
Kotousova, I.S., Lebedev, S.P., Antipov, V.V., & Lebedev, A.A. (2023). Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction. Preprints. https://doi.org/10.20944/preprints202306.0138.v1
Chicago/Turabian Style
Kotousova, I.S., Vladimir Viktorovich Antipov and Alexander Alexandrovich Lebedev. 2023 "Study of 6√3 Reconstruction Conversion on the of 4H-SiC(0001) Surface to Quasi-free Epitaxial Graphene with Electron Diffraction" Preprints. https://doi.org/10.20944/preprints202306.0138.v1
Abstract
A structural study of the 6√3 reconstruction conversion on 4H-SiC substrate surface in an Ar medium with a short sublimation annealing time into quasi-free epitaxial graphene by means of hydrogen intercalation between the upper layer of SiC and the adjacent reconstructed layer was carried out using the technique of reflection high-energy electron diffraction (RHEED) characterizing the surface of a crystalline material. A slight violation of the 6√3 reconstruction layer formation uniformity was found. The results of the study of the crystal structure of quasi-free graphene and single-layer graphene comprising a buffer layer formed on 4H-SiC in the traditional way in an Ar atmosphere without intercalation were compared.
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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