Version 1
: Received: 17 May 2023 / Approved: 17 May 2023 / Online: 17 May 2023 (07:33:57 CEST)
How to cite:
Sapkota, D.R.; Alkhayat, R.B. Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation. Preprints2023, 2023051203. https://doi.org/10.20944/preprints202305.1203.v1
Sapkota, D.R.; Alkhayat, R.B. Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation. Preprints 2023, 2023051203. https://doi.org/10.20944/preprints202305.1203.v1
Sapkota, D.R.; Alkhayat, R.B. Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation. Preprints2023, 2023051203. https://doi.org/10.20944/preprints202305.1203.v1
APA Style
Sapkota, D.R., & Alkhayat, R.B. (2023). Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation. Preprints. https://doi.org/10.20944/preprints202305.1203.v1
Chicago/Turabian Style
Sapkota, D.R. and Rabee B. Alkhayat. 2023 "Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation" Preprints. https://doi.org/10.20944/preprints202305.1203.v1
Abstract
Copper indium gallium diselenide, Cu(In,Ga)Se2, thin-film of about 1.2 μm has been deposited on Mo coated soda lime glass by thermal co-evaporation of Cu, In, Ga, and Se sources. The thin film CIGS was characterized by energy dispersive spectroscopy (EDS) and identified the elemental composition of Cu, In, Ga and Se in the film. A CIGS device was completed by the successive deposition of multiple layers; SLG/Mo/CIGS/CdS/ZnO/ITO which yielded the efficiency of 11%. External spectroscopic ellipsometry (ex-situ SE) was performed on the completed device and the device analysis was performed. Starting with the parameterized complex dielectric functions of the individual component layers, SE analysis was performed using a step-wise procedure that ranks the fitting parameters according to their ability to reduce the mean square error (MSE) of the fit. The resulting layer thicknesses and dielectric functions were used to simulate the external quantum efficiency (EQE) of the device assuming complete active layer collection. Electronic losses were identified by comparison of simulated EQE with the measured EQE. The ultimate goal of this work is the optimization of narrow band-gap CIGS-related solar cells for the bottom layer in tandem devices.
Keywords
CIGS; SE measurement; Device Analysis; EQE simulation
Subject
Physical Sciences, Applied Physics
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
