Review
Version 1
Preserved in Portico This version is not peer-reviewed
Recent Advances on GaN-Based Micro-LEDs
Version 1
: Received: 18 April 2023 / Approved: 23 April 2023 / Online: 23 April 2023 (04:20:54 CEST)
A peer-reviewed article of this Preprint also exists.
Zhang, Y.; Xu, R.; Kang, Q.; Zhang, X.; Zhang, Z.-H. Recent Advances on GaN-Based Micro-LEDs. Micromachines 2023, 14, 991. Zhang, Y.; Xu, R.; Kang, Q.; Zhang, X.; Zhang, Z.-H. Recent Advances on GaN-Based Micro-LEDs. Micromachines 2023, 14, 991.
Abstract
GaN-based micro-size light-emitting diodes (µLEDs) have a number of appealing and distinctive benefits for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, less self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is the serious barrier for applications of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as well as the optimization techniques for improving the EQE of µLEDs.
Keywords
GaN; micro-LED; non-radiative recombination; EQE; size effect
Subject
Engineering, Electrical and Electronic Engineering
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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