Preprint Review Version 1 Preserved in Portico This version is not peer-reviewed

Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes

Kengo Nagata
* ORCID logo ,
Taichi Matsubara
,
Yoshiki Saito
,
Keita Kataoka
,
Tetsuo Narita
,
Kayo Horibuchi
,
Maki Kushimoto
,
Shigekazu Tomai
,
Satoshi Katsumata
,
Yoshio Honda
,
Tetsuya Takeuchi
,
Hiroshi Amano
Version 1 : Received: 10 February 2023 / Approved: 15 February 2023 / Online: 15 February 2023 (02:33:47 CET)
Version 2 : Received: 17 February 2023 / Approved: 17 February 2023 / Online: 17 February 2023 (07:14:52 CET)

How to cite: Nagata, K.; Matsubara, T.; Saito, Y.; Kataoka, K.; Narita, T.; Horibuchi, K.; Kushimoto, M.; Tomai, S.; Katsumata, S.; Honda, Y.; Takeuchi, T.; Amano, H. Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes. Preprints 2023, 2023020249. https://doi.org/10.20944/preprints202302.0249.v1 Nagata, K.; Matsubara, T.; Saito, Y.; Kataoka, K.; Narita, T.; Horibuchi, K.; Kushimoto, M.; Tomai, S.; Katsumata, S.; Honda, Y.; Takeuchi, T.; Amano, H. Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes. Preprints 2023, 2023020249. https://doi.org/10.20944/preprints202302.0249.v1

Abstract

Deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have low light-emission efficiency; therefore, there is a need to improve this light-emission efficiency for a wide range of applications such as water and air sterilizations. UV-light-transparent device structures are considered one of the many solutions toward increasing light output power. To this end, the present study focused on developing a transparent AlGaN-based tunnel junction (TJ) as the anode of a deep-UV LED. Deep-UV LEDs composed of n+/p+-type AlGaN TJs were fabricated under the growth condition that reduced the carrier compensation in the n+-type AlGaN layers. The operating voltage was 10.8 V under the direct current (DC) operation of 63 A/cm2. In addition, magnesium zinc oxide (MgZnO)/Al reflective electrodes were fabricated to enhance the output power of the AlGaN homoepitaxial TJ LED. The output power was 57.3 mW under a DC operation of 63 A/cm2, and it was 1.7 times higher than that realized using the conventional Ti/Al electrodes. The combination of the AlGaN-based TJ and MgZnO/Al reflective contact allows further improvement of the light output power. This study confirms that the AlGaN TJ is a promising UV-transmittance structure that can obtain a high light-extraction efficiency.

Keywords

AlGaN; tunnel junction; light-emitting diode; deep-ultraviolet; MgZnO

Subject

Physical Sciences, Optics and Photonics

Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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