Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Surface and Electrical Characterization of Bilayers Based on BifeO3 and VO2

Jhonatan Martínez
,
Edgar Mosquera-Vargas
* ,
Victor Fuenzalida
ORCID logo ,
Marcos Flores
,
Gilberto Bolaños
* ,
Jesús Diosa
*
Version 1 : Received: 29 June 2022 / Approved: 30 June 2022 / Online: 30 June 2022 (06:16:25 CEST)

A peer-reviewed article of this Preprint also exists.

Martínez, J.; Mosquera-Vargas, E.; Fuenzalida, V.; Flores, M.; Bolaños, G.; Diosa, J. Surface and Electrical Characterization of Bilayers Based on Bifeo3 and VO2. Nanomaterials 2022, 12, 2578. Martínez, J.; Mosquera-Vargas, E.; Fuenzalida, V.; Flores, M.; Bolaños, G.; Diosa, J. Surface and Electrical Characterization of Bilayers Based on Bifeo3 and VO2. Nanomaterials 2022, 12, 2578.

Abstract

Thin films of BiFeO3 (BFO), VO2 and BFO/VO2 were grown on SrTiO3(100) and Al2O3(0001) monocrystalline substrates using the RF and DC sputtering techniques. The surface of the films was characterized by profilometry, AFM, and XPS. The heterostructures have roughnesses between 0.2 and 16 nm and a grain size between 20 nm and 67 nm. XPS measurements show a higher proportion of the V4+ and Bi3+ oxides. In the Fe region, a higher proportion of Fe3+ is shown in the films. The homogeneous ordering, low roughnesses, and the oxidation states on the obtained surface show a good coupling in these films. The I-V curves show ohmic behavior at room temperature and change with increasing temperature. The effect of coupling these materials in a thin film shows the appearance of hysteresis cycles I-V and R-T, typical of materials with high potential in applications such as resistive memories and solar cells.

Keywords

Thin films; BiFeO3/VO2; Solid-solid interface; Surface characterization; Electrical property

Subject

Physical Sciences, Condensed Matter Physics

Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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