preprints.org > chemistry and materials science > surfaces, coatings and films > doi: 10.20944/preprints202204.0297.v1

Preprint Review Version 1 Preserved in Portico This version is not peer-reviewed

Version 1 : Received: 27 April 2022 / Approved: 29 April 2022 / Online: 29 April 2022 (10:16:44 CEST)

This article will briefly review the progress of h-BN based solid-state metal semiconductor metal (MSM) neutron detectors. In the last decade, several groups have been working on hexagonal boron nitride (h-BN) based solid-state neutron detectors. Recently, the detection efficiency of 59% has been reported. Efficient, low-cost neutron detectors made from readily available materials are essential for various applications. Neutron detectors are widely used to detect fissile materials and nuclear power plants for security applications. The most common and widely used neutron detectors are 3He based, which are sometimes bulky, difficult to transport, have high absorption length, need relatively high bias voltage (>1000 V), and have low Q-value (0.764 MeV). Also, 3He is not readily available material. Thus, there is a strong need to find an alternative detection material. 10B isotope has a high neutron absorption cross-section, and it has been tested as a coating on the semiconducting materials. Due to the two-step process, neutron capture through 10B, and then electron-hole pair generation in a typical semiconducting material, the efficiency of these devices is not up to the mark. The progress in h-BN based detectors requires a review to envision the further improvement in this technology.

h-BN; neutron detector; Solid State detector; Metal Semiconductor Metal

Chemistry and Materials Science, Surfaces, Coatings and Films

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