Preprint
Review

Majority and Minority Charge Carrier Traps in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

This version is not peer-reviewed.

Submitted:

28 January 2022

Posted:

31 January 2022

You are already at the latest version

A peer-reviewed article of this preprint also exists.

Abstract
In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC material. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS) and minority carrier transient spectroscopy (MCTS) have led to recent progress in identifying and better understanding of the charge carrier traps in n-type 4H-SiC material.
Keywords: 
4H-SiC; Schottky barrier diodes; defects; DLTS
Subject: 
Chemistry and Materials Science  -   Applied Chemistry
Copyright: This open access article is published under a Creative Commons CC BY 4.0 license, which permit the free download, distribution, and reuse, provided that the author and preprint are cited in any reuse.

Altmetrics

Downloads

304

Views

273

Comments

0

Subscription

Notify me about updates to this article or when a peer-reviewed version is published.

Email

Prerpints.org logo

Preprints.org is a free preprint server supported by MDPI in Basel, Switzerland.

Subscribe

© 2025 MDPI (Basel, Switzerland) unless otherwise stated