Capan, I.; Brodar, T. Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques. Electron. Mater.2022, 3, 115-123.
Capan, I.; Brodar, T. Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques. Electron. Mater. 2022, 3, 115-123.
Capan, I.; Brodar, T. Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques. Electron. Mater.2022, 3, 115-123.
Capan, I.; Brodar, T. Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques. Electron. Mater. 2022, 3, 115-123.
Abstract
In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC material. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS) and minority carrier transient spectroscopy (MCTS) have led to recent progress in identifying and better understanding of the charge carrier traps in n-type 4H-SiC material.
Keywords
4H-SiC; Schottky barrier diodes; defects; DLTS
Subject
Chemistry and Materials Science, Applied Chemistry
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
