Submitted:
21 January 2022
Posted:
24 January 2022
You are already at the latest version
Abstract
In this review paper, an overview of radiation induced deep level defects in n-type 4H-SiC studied by junction spectroscopy techniques, is given. In addition to carbon vacancy (Vc), present in as-grown material already, we focus on the following deep level defects: silicon vacancy (VSi), carbon interstitial (Ci), and carbon antisite-carbon vacancy (Csi-Vc) pair. Recent advances in measurements by junction spectroscopy techniques that have led the progress toward better understanding of radiation induced defects are presented.
Keywords:
4H-SiC
; defects
; radiation
; DLTS
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