Preprint Review Version 1 Preserved in Portico This version is not peer-reviewed

An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

Version 1 : Received: 21 January 2022 / Approved: 24 January 2022 / Online: 24 January 2022 (14:21:56 CET)

How to cite: Capan, I. An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques. Preprints 2022, 2022010360. https://doi.org/10.20944/preprints202201.0360.v1 Capan, I. An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques. Preprints 2022, 2022010360. https://doi.org/10.20944/preprints202201.0360.v1

Abstract

In this review paper, an overview of radiation induced deep level defects in n-type 4H-SiC studied by junction spectroscopy techniques, is given. In addition to carbon vacancy (Vc), present in as-grown material already, we focus on the following deep level defects: silicon vacancy (VSi), carbon interstitial (Ci), and carbon antisite-carbon vacancy (Csi-Vc) pair. Recent advances in measurements by junction spectroscopy techniques that have led the progress toward better understanding of radiation induced defects are presented.

Keywords

4H-SiC; defects; radiation; DLTS

Subject

Physical Sciences, Condensed Matter Physics

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