Version 1
: Received: 21 January 2022 / Approved: 24 January 2022 / Online: 24 January 2022 (14:21:56 CET)
How to cite:
Capan, I. An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques. Preprints2022, 2022010360. https://doi.org/10.20944/preprints202201.0360.v1
Capan, I. An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques. Preprints 2022, 2022010360. https://doi.org/10.20944/preprints202201.0360.v1
Capan, I. An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques. Preprints2022, 2022010360. https://doi.org/10.20944/preprints202201.0360.v1
APA Style
Capan, I. (2022). An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques. Preprints. https://doi.org/10.20944/preprints202201.0360.v1
Chicago/Turabian Style
Capan, I. 2022 "An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques" Preprints. https://doi.org/10.20944/preprints202201.0360.v1
Abstract
In this review paper, an overview of radiation induced deep level defects in n-type 4H-SiC studied by junction spectroscopy techniques, is given. In addition to carbon vacancy (Vc), present in as-grown material already, we focus on the following deep level defects: silicon vacancy (VSi), carbon interstitial (Ci), and carbon antisite-carbon vacancy (Csi-Vc) pair. Recent advances in measurements by junction spectroscopy techniques that have led the progress toward better understanding of radiation induced defects are presented.
Keywords
4H-SiC; defects; radiation; DLTS
Subject
Physical Sciences, Condensed Matter Physics
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.