Version 1
: Received: 17 December 2021 / Approved: 21 December 2021 / Online: 21 December 2021 (13:49:14 CET)
How to cite:
Chumakov, V.; Pakhomov, I.; Titov, A.; Butyrlagin, N.; Prokopenko, N. Voltage Followers for the Design of Sallen-Key Active Rc-Filters. Preprints2021, 2021120339 (doi: 10.20944/preprints202112.0339.v1).
Chumakov, V.; Pakhomov, I.; Titov, A.; Butyrlagin, N.; Prokopenko, N. Voltage Followers for the Design of Sallen-Key Active Rc-Filters. Preprints 2021, 2021120339 (doi: 10.20944/preprints202112.0339.v1).
Cite as:
Chumakov, V.; Pakhomov, I.; Titov, A.; Butyrlagin, N.; Prokopenko, N. Voltage Followers for the Design of Sallen-Key Active Rc-Filters. Preprints2021, 2021120339 (doi: 10.20944/preprints202112.0339.v1).
Chumakov, V.; Pakhomov, I.; Titov, A.; Butyrlagin, N.; Prokopenko, N. Voltage Followers for the Design of Sallen-Key Active Rc-Filters. Preprints 2021, 2021120339 (doi: 10.20944/preprints202112.0339.v1).
Abstract
In this paper consider the circuitry of voltage followers (VF) with unity-gain, intended for practical use in active Sallen-Key RC-filters (LPF, HPF, BPF, RF). The results of research and computer modeling of radiation-resistant and low-temperature VF in the LTSpice environment on models of CJFET transistors operating under the influence of neutron flux up to 10e14 n/cm2 and cryogenic temperatures up to -197°C are presented.
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
