Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

In-place Characterization of On-state Voltage for SiC MOSFETs: Controlled Shoot-through vs. Film Heater

Version 1 : Received: 22 October 2021 / Approved: 25 October 2021 / Online: 25 October 2021 (13:49:04 CEST)

A peer-reviewed article of this Preprint also exists.

Soldati, A.; Dalboni, M.; Menozzi, R.; Concari, C. In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater. Electronics 2021, 10, 2745. Soldati, A.; Dalboni, M.; Menozzi, R.; Concari, C. In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater. Electronics 2021, 10, 2745.

Journal reference: Electronics 2021, 10, 2745
DOI: 10.3390/electronics10222745

Abstract

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.

Keywords

on-state voltage; TSEP; junction temperature; model calibration; pulsed measurements

Subject

ENGINEERING, Electrical & Electronic Engineering

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