Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Version 1 : Received: 26 December 2020 / Approved: 28 December 2020 / Online: 28 December 2020 (10:40:29 CET)

A peer-reviewed article of this Preprint also exists.

Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials 2021, 14, 354. Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials 2021, 14, 354.

Journal reference: Materials 2021, 14, 354
DOI: 10.3390/ma14020354

Abstract

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Subject Areas

Ge; germanium; doping; GaN; gallium; nitride; MOVPE; epitaxy

Comments (0)

We encourage comments and feedback from a broad range of readers. See criteria for comments and our diversity statement.

Leave a public comment
Send a private comment to the author(s)
Views 0
Downloads 0
Comments 0
Metrics 0


×
Alerts
Notify me about updates to this article or when a peer-reviewed version is published.
We use cookies on our website to ensure you get the best experience.
Read more about our cookies here.