Preprint Article Version 2 Preserved in Portico This version is not peer-reviewed

Light Trapping in Single Elliptical Silicon Nanowires

Version 1 : Received: 28 September 2020 / Approved: 29 September 2020 / Online: 29 September 2020 (14:31:01 CEST)
Version 2 : Received: 19 October 2020 / Approved: 19 October 2020 / Online: 19 October 2020 (15:58:52 CEST)

A peer-reviewed article of this Preprint also exists.

Liu, W.; Wang, Y.; Guo, X.; Song, J.; Wang, X.; Yi, Y. Light Trapping in Single Elliptical Silicon Nanowires. Nanomaterials 2020, 10, 2121. Liu, W.; Wang, Y.; Guo, X.; Song, J.; Wang, X.; Yi, Y. Light Trapping in Single Elliptical Silicon Nanowires. Nanomaterials 2020, 10, 2121.

Journal reference: Nanomaterials 2020, 10, 2121
DOI: 10.3390/nano10112121

Abstract

Light trapping in single nanowires (NWs) are of vital importance for photovoltaic applications. However, circular NWs (CNWs) can limit its light-trapping ability due to high geometrical symmetry. In this work, we present a detailed study of light trapping in single NWs with an elliptical cross-section (ENWs). We demonstrate that the ENWs exhibit significantly enhanced light trapping compared with the CNWs, which can be ascribed to the symmetry-broken structure that can orthogonalize the direction of light illumination and the leaky mode resonances (LMRs). That is, the elliptical cross-section can simultaneously increase the light path length by increasing the vertical axis and reshape the LMR modes by decreasing the horizontal axis. We found that the light absorption can be engineered via tuning the horizontal and vertical axes, the photocurrent is significantly enhanced by 374.0% (150.3%, 74.1%) or 146.1% (61.0%, 35.3%) in comparison with that of the CNWs with the same diameter as the horizontal axis of 100 (200, 400) nm or the vertical axis of 1000 nm, respectively. This work advances our understanding of how to improve light trapping based on the symmetry breaking from the CNWs to ENWs and provides a rational way for designing high-efficiency single or self-assembled NW photovoltaic devices.

Subject Areas

silicon; single nanowires; elliptical cross-section; absorption; photocurrent

Comments (1)

Comment 1
Received: 19 October 2020
Commenter: Wenfu Liu
Commenter's Conflict of Interests: Author
Comment: The revised the manuscript has highlighted in red.
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