The fabrication and characterisation of photo-anodes based on black-Si (b-Si) are presented using a photo-electrochemical cell in NaOH solution. Black-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoOx cocatalyst deposited by pulsed laser deposition (PLD). Low reﬂectivity R < % of Black-Si over the entire visible and near-IR (λ < 2 µm) spectral range is favourable in better absorption of light while an increased surface area facilities larger current densities. Photoelectrochemical performance of the heterostructured photoanode is discussed in terms of n-n junction between b-Si and TiO2.
black Si; antireﬂection; photo-anode; water splitting9
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