Preprint Article Version 1 This version is not peer-reviewed

Black-Si as Photoelectrode

Version 1 : Received: 6 April 2020 / Approved: 10 April 2020 / Online: 10 April 2020 (07:51:31 CEST)

How to cite: Linklater, D.; Haydous, F.; Xi, C.; Pergolesi, D.; Hu, J.; Ivanova, E.; Juodkazis, S.; Lippert, T.; Juodkazyte, J. Black-Si as Photoelectrode. Preprints 2020, 2020040169 (doi: 10.20944/preprints202004.0169.v1). Linklater, D.; Haydous, F.; Xi, C.; Pergolesi, D.; Hu, J.; Ivanova, E.; Juodkazis, S.; Lippert, T.; Juodkazyte, J. Black-Si as Photoelectrode. Preprints 2020, 2020040169 (doi: 10.20944/preprints202004.0169.v1).

Abstract

The fabrication and characterisation of photo-anodes based on black-Si (b-Si) are presented using a photo-electrochemical cell in NaOH solution. Black-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoOx cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity R < % of Black-Si over the entire visible and near-IR (λ < 2 µm) spectral range is favourable in better absorption of light while an increased surface area facilities larger current densities. Photoelectrochemical performance of the heterostructured photoanode is discussed in terms of n-n junction between b-Si and TiO2.

Subject Areas

black Si; antireflection; photo-anode; water splitting9

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