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Gas permeation Property of Silicon Carbide Membrane Synthesized by Counter Diffusion Chemical Vapor Deposition

This version is not peer-reviewed.

Submitted:

01 November 2019

Posted:

03 November 2019

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Abstract
An amorphous silicon carbide (SiC) membrane with H2 permeance of 1.2E-7 mol・m-2・s-1・Pa-1 and excellent H2/CO2 selectivity of 2600 at 673 K was successfully synthesized on a Ni-gamma-alumina-coated alpha-alumina porous support by counter diffusion chemical vapor deposition (CDCVD) using silacycrobutane (SCB) at 788 K. The dominant permeation mechanism for He and H2 in the temperature range 323-673 K was activated diffusion. The SiC active layer was formed in Ni-gamma-Al2O3 intermediate layer. The thermal expansion coefficients mismatch between SiC active layer and Ni-gamma-Al2O3-coated alpha-Al2O3 porous support was eased by the low decomposition temperature of SiC source and membrane structure.
Keywords: 
hydrogen; amorphous; silicon carbide; alumina; chemical vapor deposition
Subject: 
Chemistry and Materials Science  -   Chemical Engineering
Copyright: This open access article is published under a Creative Commons CC BY 4.0 license, which permit the free download, distribution, and reuse, provided that the author and preprint are cited in any reuse.

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