Preprint Article Version 1 This version is not peer-reviewed

Gas permeation Property of Silicon Carbide Membrane Synthesized by Counter Diffusion Chemical Vapor Deposition

Version 1 : Received: 1 November 2019 / Approved: 3 November 2019 / Online: 3 November 2019 (18:14:26 CET)

How to cite: Nagano, T.; Sato, K.; Kawahara, K. Gas permeation Property of Silicon Carbide Membrane Synthesized by Counter Diffusion Chemical Vapor Deposition. Preprints 2019, 2019110027 (doi: 10.20944/preprints201911.0027.v1). Nagano, T.; Sato, K.; Kawahara, K. Gas permeation Property of Silicon Carbide Membrane Synthesized by Counter Diffusion Chemical Vapor Deposition. Preprints 2019, 2019110027 (doi: 10.20944/preprints201911.0027.v1).

Abstract

An amorphous silicon carbide (SiC) membrane with H2 permeance of 1.2E-7 mol・m-2・s-1・Pa-1 and excellent H2/CO2 selectivity of 2600 at 673 K was successfully synthesized on a Ni-gamma-alumina-coated alpha-alumina porous support by counter diffusion chemical vapor deposition (CDCVD) using silacycrobutane (SCB) at 788 K. The dominant permeation mechanism for He and H2 in the temperature range 323-673 K was activated diffusion. The SiC active layer was formed in Ni-gamma-Al2O3 intermediate layer. The thermal expansion coefficients mismatch between SiC active layer and Ni-gamma-Al2O3-coated alpha-Al2O3 porous support was eased by the low decomposition temperature of SiC source and membrane structure.

Subject Areas

hydrogen; amorphous; silicon carbide; alumina; chemical vapor deposition

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