Nagano, T.; Sato, K.; Kawahara, K. Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition. Membranes2020, 10, 11.
Nagano, T.; Sato, K.; Kawahara, K. Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition. Membranes 2020, 10, 11.
Nagano, T.; Sato, K.; Kawahara, K. Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition. Membranes2020, 10, 11.
Nagano, T.; Sato, K.; Kawahara, K. Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition. Membranes 2020, 10, 11.
Abstract
An amorphous silicon carbide (SiC) membrane with H2 permeance of 1.2E-7 mol･m-2･s-1･Pa-1 and excellent H2/CO2 selectivity of 2600 at 673 K was successfully synthesized on a Ni-gamma-alumina-coated alpha-alumina porous support by counter diffusion chemical vapor deposition (CDCVD) using silacycrobutane (SCB) at 788 K. The dominant permeation mechanism for He and H2 in the temperature range 323-673 K was activated diffusion. The SiC active layer was formed in Ni-gamma-Al2O3 intermediate layer. The thermal expansion coefficients mismatch between SiC active layer and Ni-gamma-Al2O3-coated alpha-Al2O3 porous support was eased by the low decomposition temperature of SiC source and membrane structure.
Keywords
hydrogen; amorphous; silicon carbide; alumina; chemical vapor deposition
Subject
MATERIALS SCIENCE, Other
Copyright:
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