Preprint Article Version 1 This version is not peer-reviewed

Impact of Swift Heavy Ion (120 MeV, Ag9+) on Doped ZnO: Al Thin Film

Version 1 : Received: 27 October 2019 / Approved: 27 October 2019 / Online: 27 October 2019 (15:40:24 CET)

How to cite: Mishra, L.; Kumar, V.; Singh, U.P. Impact of Swift Heavy Ion (120 MeV, Ag9+) on Doped ZnO: Al Thin Film. Preprints 2019, 2019100310 (doi: 10.20944/preprints201910.0310.v1). Mishra, L.; Kumar, V.; Singh, U.P. Impact of Swift Heavy Ion (120 MeV, Ag9+) on Doped ZnO: Al Thin Film. Preprints 2019, 2019100310 (doi: 10.20944/preprints201910.0310.v1).

Abstract

In the present work, doped ZnO (ZnO:Al) thin film has been grown on Silicon (Si) substrate by DC sputtering. The obtained thickness of the film is 230 ± 5 nm. The films were subjected to swift heavy ion (SHI) irradiation 120 MeV, Ag9+ with different fluences ranging from 3 × 1011 to 3 × 1013 ions/cm2. To study the impact of SHI, both pristine and irradiated samples were characterized to obtain the structural, surface morphological and electrical properties using X-ray diffractometry (XRD), atomic force microscopy (AFM) and hall effect measurement system respectively. From XRD results it is observed that there is change in crystallinity of the film with increase in irradiation fluence. The surface morphological studies through AFM shows the increase in surface roughness with increase in fluence. A significant change is also observed in electrical parameters viz conductivity, mobility and carrier concentration. Conductivity, mobility and carrier concentration decreases with increasing fluence.

Subject Areas

ZnO:Al; Swift heavy ion; XRD; AFM; Hall measurement

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