Talantsev, E.F. DC Self-Field Critical Current in Superconductor Dirac-Cone Material/Superconductor Junctions. Nanomaterials2019, 9, 1554.
Talantsev, E.F. DC Self-Field Critical Current in Superconductor Dirac-Cone Material/Superconductor Junctions. Nanomaterials 2019, 9, 1554.
Talantsev, E.F. DC Self-Field Critical Current in Superconductor Dirac-Cone Material/Superconductor Junctions. Nanomaterials2019, 9, 1554.
Talantsev, E.F. DC Self-Field Critical Current in Superconductor Dirac-Cone Material/Superconductor Junctions. Nanomaterials 2019, 9, 1554.
Abstract
Recently, several research groups have reported on anomalous enhancement of the self-field critical currents, Ic(sf,T), at low temperatures in superconductor/Dirac-cone material/superconductor (S/DCM/S) junctions. Some papers attributed the enhancement to the low-energy Andreev bound states arising from winding of the electronic wave function around DCM. In this paper, Ic(sf,T) in S/DCM/S junctions have been analyzed by two approaches: modified Ambegaokar-Baratoff and ballistic Titov-Beenakker models. It is shown that the ballistic model is an inadequate tool to analyze experimental data from S/DCM/S junctions. The primary mechanism for limiting superconducting current in S/DCM/S junctions is different from the conventional view that the latter is the maximum value within the order parameter phase variation. Thus, there is a need to develop a new model for self-field critical currents in S/DCM/S systems.
Keywords
the self-field critical current; induced superconductivity in dirac-cone materials; single layer graphene; multiple-band superconductivity
Subject
Physical Sciences, Condensed Matter Physics
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
