Preprint Article Version 1 This version is not peer-reviewed

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

Version 1 : Received: 18 September 2019 / Approved: 19 September 2019 / Online: 19 September 2019 (15:46:56 CEST)

How to cite: Lubatsch, A.; Frank, R. Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors. Preprints 2019, 2019090228 (doi: 10.20944/preprints201909.0228.v1). Lubatsch, A.; Frank, R. Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors. Preprints 2019, 2019090228 (doi: 10.20944/preprints201909.0228.v1).

Abstract

Spatially uniform optical excitations can induce Floquet topological band structures within insulators which can develop similar or equal characteristics as are known from three-dimensional topological insulators. We derive in this article theoretically the development of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter and we present results for the lifetime of these states and their occupation in the non-equilibrium. The direct physical impact of the mathematical precision of the Floquet-Keldysh theory is evident when we solve the driven system of a generalized Hubbard model with our framework of dynamical mean field theory (DMFT) in the non-equilibrium for a case of ZnO. The physical consequences of the topological non-equilibrium effects in our results for correlated systems are explained with their impact on optoelectronic applications.

Subject Areas

topological insulators; Floquet states; Dynamical Mean Field Theory; semiconductors; strongly correlated electronics

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