Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Role of Structure and Composition on the Performances of p-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

Raquel Barros
,
Kachirayil J. Saji
,
João C. Waerenborgh
,
Pedro Barquinha
ORCID logo ,
Luis Pereira
,
Rodrigo Martins
* ,
Elvira Fortunato
*
Version 1 : Received: 30 December 2018 / Approved: 3 January 2019 / Online: 3 January 2019 (10:13:59 CET)

A peer-reviewed article of this Preprint also exists.

Barros, R.; Saji, K.J.; Waerenborgh, J.C.; Barquinha, P.; Pereira, L.; Carlos, E.; Martins, R.; Fortunato, E. Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures. Nanomaterials 2019, 9, 320. Barros, R.; Saji, K.J.; Waerenborgh, J.C.; Barquinha, P.; Pereira, L.; Carlos, E.; Martins, R.; Fortunato, E. Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures. Nanomaterials 2019, 9, 320.

Abstract

This work reports the role of structure and composition on the determination of the performances of p-type SnOx TFTs deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp), between 0% and 20%, but where the p-type conduction was only observed between 2.8–3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies. The study allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used that lead to the production of TFTs with a bottom gate configuration, on glasses coated with conductive Indium Tin Oxide, followed by Aluminium Titanium Oxide dielectric layer with saturation mobility of 4.6 cm2V−1s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V.

Keywords

p-type TFT; p-type oxide semiconductors; SnO electrical properties; oxide structure analysis

Subject

Chemistry and Materials Science, Electronic, Optical and Magnetic Materials

Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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