Preprint Review Version 1 This version is not peer-reviewed

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Version 1 : Received: 4 December 2018 / Approved: 6 December 2018 / Online: 6 December 2018 (05:16:44 CET)

How to cite: Rodríguez-Benítez, O.M.; Ponce Silva, M.; Hernández González, L.; Aqui-Tapia, J.A.; Claudio Sánchez, A.; Calzada-Lara, G.; Cortés-García, C. Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters. Preprints 2018, 2018120072 Rodríguez-Benítez, O.M.; Ponce Silva, M.; Hernández González, L.; Aqui-Tapia, J.A.; Claudio Sánchez, A.; Calzada-Lara, G.; Cortés-García, C. Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters. Preprints 2018, 2018120072

Abstract

Power semiconductor devices are essential from the operation point of view, size, efficiency and cost, these components are used in a myriad of applications, providing features that make them an important part of the system in which they are operating. This document analyzes and compares the basic structure, properties, design aspects, as well as temperature performance, stability and switching losses, present in devices on silicon (Si), silicon carbide (SiC) and new generation devices fabricated in gallium nitride (GaN) applied in renewable energy systems. The main objective is determinate the viability of the new generation components, which present a superior performance in view of an increase in efficiency, conductivity, decreases in switching losses, lower resistances and parasitic capacitances as well as higher operating frequency range. Therefore demonstrating the GaN components are a strong and viable candidate to solve some of the problems present in renewable energy systems.

Subject Areas

gallium nitride (GaN); silicon carbide (SiC); silicon (Si); converters; power devices; power electronics

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