Version 1
: Received: 8 June 2018 / Approved: 12 June 2018 / Online: 12 June 2018 (06:11:36 CEST)
How to cite:
Shi, J.; Peng, W.; Chen, J.; Fang, L.; Sun, K. Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process. Preprints2018, 2018060167. https://doi.org/10.20944/preprints201806.0167.v1
Shi, J.; Peng, W.; Chen, J.; Fang, L.; Sun, K. Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process. Preprints 2018, 2018060167. https://doi.org/10.20944/preprints201806.0167.v1
Shi, J.; Peng, W.; Chen, J.; Fang, L.; Sun, K. Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process. Preprints2018, 2018060167. https://doi.org/10.20944/preprints201806.0167.v1
APA Style
Shi, J., Peng, W., Chen, J., Fang, L., & Sun, K. (2018). Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process. Preprints. https://doi.org/10.20944/preprints201806.0167.v1
Chicago/Turabian Style
Shi, J., Liang Fang and Kun Sun. 2018 "Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process" Preprints. https://doi.org/10.20944/preprints201806.0167.v1
Abstract
The surface planarity and asperity removal behaviors of atomic scale under the ultrathin water environment was studied for the nanoscale process by molecular dynamics simulation. The monolayer atomic removal was achieved under the noncontact and monoatomic layer contact conditions with different water film thickness, and the newly formed surface is relatively smooth and no deformed layer and plastic defects exist. The nanoscale processing is governed by the interatomic adhering action during which the water film transmits the loading forces to Cu surface and thereby result in the migration and removal of surface atoms. With scratching depth ≥ 0.5 nm, the abrasive particle squeezed out the water film from scratching region and scratched Cu surface directly, leading to the surface quality deterioration mainly governed by the plowing action. This study brings the goals of “0 nm planarity, 0 residual defects and 0 polishing pressure” closer to us in the nanoscale process for the development of ultra-precision manufacture technology.
Keywords
surface removal; nanoscale process; copper thin film; ultrathin water film
Subject
Chemistry and Materials Science, Surfaces, Coatings and Films
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
