Version 1
: Received: 25 April 2018 / Approved: 27 April 2018 / Online: 27 April 2018 (07:51:02 CEST)
Version 2
: Received: 27 April 2018 / Approved: 27 April 2018 / Online: 27 April 2018 (09:46:15 CEST)
How to cite:
Zhou, L.; Xiao, L.; Yang, H.; Liu, J.; Yu, X. Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells Using Metal Oxide Layers by Band-Gap Alignment Engineering. Preprints2018, 2018040353. https://doi.org/10.20944/preprints201804.0353.v2
Zhou, L.; Xiao, L.; Yang, H.; Liu, J.; Yu, X. Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells Using Metal Oxide Layers by Band-Gap Alignment Engineering. Preprints 2018, 2018040353. https://doi.org/10.20944/preprints201804.0353.v2
Zhou, L.; Xiao, L.; Yang, H.; Liu, J.; Yu, X. Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells Using Metal Oxide Layers by Band-Gap Alignment Engineering. Preprints2018, 2018040353. https://doi.org/10.20944/preprints201804.0353.v2
APA Style
Zhou, L., Xiao, L., Yang, H., Liu, J., & Yu, X. (2018). Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells Using Metal Oxide Layers by Band-Gap Alignment Engineering. Preprints. https://doi.org/10.20944/preprints201804.0353.v2
Chicago/Turabian Style
Zhou, L., Jie Liu and Xibin Yu. 2018 "Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells Using Metal Oxide Layers by Band-Gap Alignment Engineering" Preprints. https://doi.org/10.20944/preprints201804.0353.v2
Abstract
Band-gap alignment engineering has now been extensively studied due to its high potential application. Here we demonstrate a simple route to synthesize two metal oxide layers and align them together according to their bandgaps on surface of crystalline silicon (c-Si) solar cells. The metal oxide layers can not only extend absorption spectrum to generate extra carriers but also serve to separate electron-hole pairs more efficiently. As a consequence, the photovoltaic performance of SnO2/CdO /Si double-layer solar cell (DLSC) is highly improved compared to CdO/Si and SnO2/Si single-layer solar cells(SLSCs) and SnO2/CdO/Si double-layer solar cell (DLSC). By the alignment engineering, the SnO2/CdO/Si DLSC produces a short circuit photocurrent (Jsc) of 38.20 mA/cm2, an open circuit photovoltage (Voc) of 0.575 V and a fill factor (FF) of 68.7%, corresponding to a light to electric power conversion efficiency (η) of 15.09% under AM1.5 illumination. These results suggest that with the use of metal oxide layers by band-gap alignment engineering, new avenues have been opened for developing high-efficiency and cost-effective c-Si solar cells.
Keywords
silicon solar cells; semiconductors; electron-hole pairs
Subject
Chemistry and Materials Science, Nanotechnology
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
