Tanner, B.K.; Allen, D.; Wittge, J.; Danilewsky, A.N.; Garagorri, J.; Gorostegui-Colinas, E.; Elizalde, M.R.; McNally, P.J. Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals2017, 7, 347.
Tanner, B.K.; Allen, D.; Wittge, J.; Danilewsky, A.N.; Garagorri, J.; Gorostegui-Colinas, E.; Elizalde, M.R.; McNally, P.J. Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals 2017, 7, 347.
Abstract
The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary, the Raman data coming from within a few micrometers of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometers. For example, Raman data provides an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimeter length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometers of the bevel edge of 200mm diameter wafers.
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