Preprint Article Version 1 This version is not peer-reviewed

Scale-Dependent Light Scattering Analysis of Textured Structures on LED Light Extraction Enhancement Using Hybrid Full-Wave Finite-Difference Time-Domain and Ray-Tracing Methods

Version 1 : Received: 14 March 2017 / Approved: 15 March 2017 / Online: 15 March 2017 (00:12:16 CET)

A peer-reviewed article of this Preprint also exists.

Lee, T.-X.; Chou, C.-C. Scale-Dependent Light Scattering Analysis of Textured Structures on LED Light Extraction Enhancement Using Hybrid Full-Wave Finite-Difference Time-Domain and Ray-Tracing Methods. Energies 2017, 10, 424. Lee, T.-X.; Chou, C.-C. Scale-Dependent Light Scattering Analysis of Textured Structures on LED Light Extraction Enhancement Using Hybrid Full-Wave Finite-Difference Time-Domain and Ray-Tracing Methods. Energies 2017, 10, 424.

Journal reference: Energies 2017, 10, 424
DOI: 10.3390/en10040424

Abstract

A multiscale model that enables quantitative understanding and prediction of the size effect on scattering properties of micro- and nanostructures is crucial for the design of LED surface textures optimized for high light extraction efficiency (LEE). In this paper, a hybrid process for combining full-wave finite-difference time-domain simulation and a ray-tracing technique based on a bidirectional scattering distribution function model is proposed. We apply this method to study the influence of different pattern sizes of a patterned sapphire substrate on GaN-based LED light extraction from the microscale to the nanoscale. The results show that near-wavelength–scaled patterns with strong diffraction are not expected to enhance LEE. By contrast, microscaled patterns with optical diffusion behavior have the highest LEE at a specific aspect ratio, and subwavelength-scaled patterns that have antireflection properties show marked enhancement of LEE for a wide range of aspect ratios.

Subject Areas

Light-emitting diodes; Light extraction efficiency; Textured structures; Light scattering; BSDF, BRDF, and BTDF

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