Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz) and rectenna solar cells (optical frequencies). Such a major challenge can be resolved by replacing the conventional semiconductor diodes with tunneling diodes as the rectenna switches. In this work, metal-insulator-metal (MIM) tunneling diodes based on 2D insulating materials were designed, and their performance was evaluated using a comprehensive simulation approach which includes density-function-theory simulation of 2D insulator materials, modeling of the electrical characteristics of tunneling diodes, and circuit simulation for rectifiers. It is found that novel 2D insulators such as monolayer TiO2 can be obtained by oxidizing sulfur-metal layered materials. The MIM diodes based on such insulators exhibit fast tunneling and excellent current rectifying properties. Such tunneling diodes effectively convert the received high-frequency electromagnetic waves into direct current.

Resistive random-access memory has emerged as a promising non-volatile memory technology, garnering substantial attention due to its potential for high operational performance, low power consumption, and scalability. Two-dimensional nanostructured materials play a pivotal role in RRAM devices, offering enhanced electrical properties and physical attributes that contribute to overall device improvement. In this study, self-rectifying switching behavior in RRAM devices is proposed based on molybdenum disulfide nanocomposites decorated with palladium on SiO2/Si substrates. The integration of Pd and MoS2 at the nanoscale effectively mitigates leakage currents decreasing from cross-talk in the RRAM array, eliminating the need for a separate selector device. The successful demonstration of the expected RRAM switching behavior follows the application of a Pd nanoparticle coating. The fabricated Pd-MoS2 synaptic device showed a high current ratio for forward/reverse current higher than 60 at a low resistance state and observed a memory on/off ratio of 103 performing stable resistance switching behavior.

Nasopharyngeal carcinoma (NPC) has not been thoroughly studied, and the pathogenesis of NPC is unclear. Scientists have neither discovered effective therapies nor achieved a desirable prognosis. Some studies have found that the regulation of intra- and extracellular ion channels hinges directly on cell apoptosis, and treatment with Gambogenic acid (GNA) brings changes to the volume-sensitive outwardly rectifying chloride (VSOR Cl-) current of CNE-2Z cells recorded by the patch clamp method. Nevertheless, rarely have any researchers probed into the relevance between this variation and the anti-tumor mechanism of GNA. This paper is suggested that GNA activates the VSOR Cl- current on the CNE-2Z cell membrane, and the activation of VSOR Cl- currents by GNA in CNE-2Z cells is blocked by the chloride channel blockers DIDS and DCPIB. GNA induces the down-regulation of GRP78 and up-regulation of ATF4 as well as chop proteins, which is evidence for the induction of CNE-2Z cell apoptosis, and this correlates with ER stress. GNA can activate the VSOR Cl- channel and lead to the occurrence of ER stress, thus inducing the apoptosis of CNE-2Z cells and inhibiting the proliferation of CNE-2Z cells.