Active magnetic bearings have higher efficiency than other bearings because there is no physical contact. However, this benefit is mitigated by the addition of electrical power consumption. It is therefore important for magnetic bearings to have efficient power electronics. Gallium nitride-based transistors are a relatively new form of transistor which have shown to be more efficient than MOSFETs. There is an insufficient body of literature in the area of application of these transistors for magnetic levitation. This work presents a simple 1 degree-of-freedom voltage controlled levitation experiment in which levitation is achieved with both a gallium nitride transistor and a MOSFET.
Voltage losses and current consumption are measured when using each transistor during levitation. In particular, transients during open-to-closed and closed-to-open states are measured for PWM pulsing. It is found that the
gallium nitride transistor is superior in both switching time and efficiency in situ for magnetic levitation.

This paper presents computational study of non-stoichiometric nickel oxide in a 32-cell NiO system to model and validate localized heating effects due to nanosecond laser irradiation. Variation in Bandgap of NiO is studied as a function of varying concentrations of native defects ranging from 0 to 25%. It is observed that there is a slight increase in the bandgap from 3.8 eV for stiochiometric NiO to 3.86 eV for Ni-rich NiO and to 3.95 eV for O-rich NiO. It is hence deduced that the experimental laser irradiation leads to simultaneous reduction of Ni²⁺ ions and oxidation of NiO as the number of laser pulses increase. As well, a detailed study on the effects of doping nickel family elements, i.e. palladium (Pd) and platinum (Pt) in stoichiometric NiO is presented. A bandgap decrease from 3.8 eV for pure NiO to 2.5 eV for Pd-doping and 2 eV for Pt-doping for varying doping concentrations ranging from 0–25% Pd, Pt respectively is observed.