ARTICLE
|
doi:10.20944/preprints202301.0174.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
GaN; MOSHFET; Ga2O3; MOCVD; Gate Dielectric
Online: 10 January 2023 (04:46:24 CET)
REVIEW
|
doi:10.20944/preprints201709.0013.v1
Subject:
Physical Sciences,
Applied Physics
Keywords:
AlN; AlGaN; deep ultraviolet; light-emitting diodes; MOCVD
Online: 5 September 2017 (04:55:57 CEST)