Crystalline silicon nanomembrane (Si NM) is promising in wearable and implantable bioelectronics due to its electrical and mechanical performances. However, the current explorations are not enough to firmly bridge ultrathin encapsulation strategies with high performance crystalline Si NM based transistors. In this work, we utilized Al2O3/alucone as the ultrathin encapsulation strategies aim to thoroughly investigate the effect of gate dielectric surface area on the electrical performance of crystalline Si NM based metal-oxide-semiconductor capacitors (MOSCAPs). The comparative analysis was implemented on the three types of diameters (Ø) MOSCAPs with and without Al2O3/alucone encapsulation under planar and concave/convex bending conditions. Benefited from the Al2O3/alucone ultrathin encapsulations, the stability of gate leakage current density, and interfacial characteristics were maintained and improved under mechanical bending deformations for MOSCAPs with predefined Ø of 160, 240, and 320 μm compared to the bare MOSCAPs. Combined with the Ø-related mechanical analysis on the maximum strain in the critical layers and the practical measurements, the encapsulated MOSCAPs with Ø 160 μm showed the most stable electro-mechanical performances. The variations for encapsulated MOSCAPs with three types of Ø emerged in the oxide layer and the interface at dielectric/Si NM that were carefully evaluated according to the bending deformations. These findings are significant for leveraging the practical applications in the ultrathin encapsulation strategies for reliable operations of crystalline Si NM based integrated circuits (ICs).

To improve the wear resistance of polyimide (PI), surface modification was developed. In this study, the tribological properties of graphene (GN), graphene oxide (GO), and KH550-grafted graphene oxide (K5-GO) modified PI were evaluated by molecular dynamics (MD) at the atomic level. The findings indicated that the addition of nanomaterials can significantly enhance the friction performance of PI. The friction coefficient of PI composites decreased from 0.253 to 0.232, 0.136, and 0.079 after coating GN, GO and K5-GO, respectively. Among them, the K5-GO/PI exhibited the best surface wear resistance. Importantly, the mechanism behind the modification of PI was thoroughly revealed by observing the wear state, analyzing the changes of interfacial interactions, interfacial temperature, and relative concentration.

The Gurney flap (GF) is a miniature lift-enhancement device and is usually mounted at the trailing edge of an airfoil. The GF and has been successfully applied to isolated airfoils, multi-element airfoils, and aircraft wings as well as helicopter rotor due to its attractive features of simplicity, cost-effective and separation control. The GF also has aroused the attention of researchers in the turbomachinery industry. However, limited studies are currently available on the application of a GF to an axial fan.Hence, in this paper, we conduct a wind tunnel and computational fluid dynamic (CFD) investigation on an axial fan profiled with a NACA 65-(12)10 airfoil to evaluate the effect of the GF on the performance of the fan. We also present the detailed flow features of the fan with and without the GF after validating the simulation results with the experimental results. The experimental results show that as the GF is installed higher on the fan blade, it can produce a higher total pressure rise accompanied with a greater loss of efficiency. The installation of the GF also enlarges the work capacity of the fan. Detailed flow field analysis, including the surface pressure distribution, vorticity distribution at the trailing edge and streamline distribution of the fan, is carried out to understand the mechanisms of the effect of the GF on the performance of the fan.

Supplementary lighting is commonly used in high-quality seedling production. In this study, grafted tomato seedlings were grown for 10 days in a glasshouse with a 16-hour daily supplementary lighting at 100 μmol·m⁻²·s⁻¹ PPFD from either high pressure sodium (HPS), metal halide (MH), far-red (FR), white LEDs (W), or mixed LEDs (W₁R₂B₁) to determine which light sources improve the seedling quality. The control did not have any supplementary light. The physiological parameters and the expression of genes related to photosynthesis were analyzed. The results show that the root length, biomass, number of leaves, chlorophyll (SPAD), dry weight to height ratio (WHR) of the scion, and specific leaf weight (SLW) were the greatest for grafted seedlings grown in W₁R₂B₁. The level of root ball formation was the greatest for seedlings grown in W₁R₂B₁, followed by those grown in W, HPS, and MH. Seedlings grown in FR did not fare very well, as they were very thin and weak. Moreover, the expression of two photosynthetic genes (PsaA and PsbA) was significantly increased by W₁R₂B₁ and W, which suggests that the plastid or nuclear genes might be regulated. The overall results suggest that W₁R₂B₁ was the most suitable light source to enhance the quality of grafted tomato seedlings. The results of this study could be used as a reference for seedling production in glasshouses, and provide new insights in the research of lights affecting the development of plants.

With the unceasing advancement in wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors enable totem-pole bridgeless PFC to become a dominant solution for energy storage systems (ESS). This paper focuses on design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode Gallium Nitride (eGaN) FETs, not only to simplify the control implementation, but also to achieve high power quality and efficiency. The converter is designed to convert a 90-264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC attains 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) reaches 1.52% while the power factor gains 0.9985.