We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS₂) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS₂ crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS₂ platelets. Employing this simple method, that can be easily extended to other 2D materials, we fabricate MoS₂-on-paper broadband photodectectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR). We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.

We show how the excitonic features of biaxial MoS₂ flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 ± 2) meV/% and (-45 ± 2) meV/% respectively, which are larger than those found for single-layer MoS₂. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 ± 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain).

Environmentally friendly and low-cost sensors are needed for the next generation disposable electronics applications. Given its low-cost, availability and biodegradability, paper-based devices are a very promising. Here we demonstrate the fabrication of a tungsten disulphide (WS2) strain sensor on standard copy paper. The WS2 is deposited through direct abrasion of WS2 powder against the paper surface making the fabrication of the device low-tech and cost effective. The fabricated strain gauge devices present gauge factors up to ~70 for strains in the ± 0.5 % range. These values are ~ 9 times larger than that obtained on devices with the same geometry but using a graphite film instead a WS2 as a sensitive material. We demonstrate the potential of these WS2-on-paper strain gauges by integrating them directly on a paper cantilever to sense mass and forces. We show how this very simple device can detect sub-milligram masses. Moreover, we also demonstrate the capability of transducing motion in mechanical resonators by gluing a WS2-on-paper strain gauge on their surface.

We fabricate large-area atomically thin MoS₂ layers through the direct transformation of crystalline molybdenum trioxide (MoO₃) by sulfurization at relatively low temperatures. The obtained MoS₂ sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300×300 µm² with 2-4 layers in thickness and show a marked p-type behaviour. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS₃), a layered semiconductor that attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS₃ in air above 300 °C gradually converts it into TiO₂, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS₃ nanoribbons and its influence on the optoelectronic properties of TiS₃-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS₃ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase of the bandgap of titanium oxysulfide (TiO_2-xS_x) when increasing the amount of oxygen and reducing the amount of sulfur.

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques also opened the door to study the optical properties of these nanomaterials. We present a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS₂, MoSe₂, WS₂ and WSe₂, with thickness ranging from one layer up to six layers. We analyze the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provides a route to employ differential reflectance spectroscopy for determining the number of layers of MoS₂, MoSe₂, WS₂ and WSe₂.