The aim of this work is to synthesis and characterize the Ta/TaN multilayer thin film coatings on 52100 tool steel under three different levels of N2 gas flow rate. The High Power Impulse Magnetron Sputtering (HiPIMS) technique was used for the deposition of Ta/TaN thin film multilayers on the substrate. Microstructure, coating thickness, composition, hardness and tribological properties of Ta/TaN multilayer coatings were characterized using scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), microhardness tester and pin-on-disc tester, respectively. Adhesion property was evaluated via scratch testing of the thin film thin film layer. The lowest coefficient of friction was observed with the thin film layer of higher N2 gas flow rate due to the highest adhesion value of the coating on the surface. The obtained results on hardness, adhesion and coefficient of friction properties demonstrated that this Ta/TaN multilayer thin film coating can be used for tribological applications.

Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of a thin aluminum nitride (AlN) buffer layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, the SiC films were also grown on Si substrates. Comparisons of the structural and chemical properties of SiC thin films grown on the two types of substrates allowed us to evaluate the influence of AlN buffer layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of HiPIMS technique to produce polycrystalline SiC thin films at near room temperature only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with a good structural quality using AlN buffer layer.

This review focuses on Cu/TiO2 sequentially and Cu-TiO2 co-sputtered catalytic/photocatalytic surfaces leading to bacterial inactivation discussing their stability, synthesis, adhesion and antibacterial kinetics. The intervention of TiO2, Cu and the synergic effect of Cu and TiO2 on films prepared by a colloidal approach and other techniques is also reviewed leading to bacterial inactivation. Processes in aerobic media and anaerobic media leading to bacterial loss of viability on multidrug resistant (MDR) pathogens, Gram-negative (-) and Gram-positive(+) bacteria are described. Insight is provided for the interfacial charge transfer mechanism under solar irradiation occurring between TiO2 and Cu. surface properties of 2D TiO2/Cu and TiO2-Cu films are correlated with the bacterial inactivation kinetics observed in the dark and under light. The intervention of these antibacterial sputtered surfaces in health-care facilities leading to MRSA-isolates is described in the dark and under the actinic light. The synergic intervention of the Cu and TiO2 films leading to bacterial inactivation prepared by direct current magnetron sputtering (DCMS), pulsed direct current magnetron sputtering (DCMSP) and highly ionized pulse plasma magnetron sputtering (HIPIMS) is reported in a detailed way.