In this paper, different concepts of reconfigurable RF-MEMS attenuators for beamforming applications are proposed and critically assessed. Capitalizing on the previous part of this work, the 1-bit attenuation modules featuring series and shunt resistors and low-voltage membranes (7-9 V) are employed to develop a 3-bit attenuator for fine-tuning attenuations (&lt; -10 dB) in the 24.25-27.5 GHz range. More substantial attenuation levels are investigated by means of fabricated samples of coplanar waveguide (CPW) sections equipped with Pi-shaped resistors aiming at attenuations of -15, -30, and -45 dB. The remarkable electrical features of such configurations, showing flat attenuation curves and limited return losses, and the investigation of a switched-line attenuator design based on them led to the final proposed concept of a low-voltage 24-state attenuator. Such simulated device combines the Pi-shaped resistors for substantial attenuations with the 3-bit design for fine-tuning operations, showing a maximum attenuation level of nearly -50 dB while maintaining steadily flat attenuation levels and limited return losses (< -11 dB) along the frequency band of interest.

This paper describes different variants of broadband and simple attenuator modules for beamforming applications, based on Radio Frequency Micro Electro-Mechanical Systems (RF-MEMS), framed within Coplanar Waveguide (CPW) structures. The modules proposed in the first part of this work differ in their actuation voltage, topology, and desired attenuation level. Fabricated samples of basic 1-bit attenuation modules, characterized by a moderate footprint of 690 x 1960 µm2 and aiming at attenuation levels of -2, -3 and -5 dB in the 24.25-27.5 GHz range, are presented in their variants featuring both low actuation voltages (5-7 V) as well as higher values (~ 45V), the latter ones ensuring larger mechanical restoring force (and robustness against stiction). Beyond the fabrication non-idealities that affected the described samples, the substantial agreement between simulations and measurement outcomes proved that the proposed designs could provide precise attenuation levels up to 40 GHz, ranging up to nearly -3 dB and -5 dB for the series and shunt variants, respectively. Moreover, they could be effective building blocks for future wideband and reconfigurable RF-MEMS attenuators. In fact, in the second part of this work, combinations of the discussed cells and other configurations meant for larger attenuation levels will be investigated.