SiOx films, frequently derived from amino silane precursors, have found several applications with high added value. Although frequently used, the deposition of coatings from Tris(dimethyl amino)silane (TDMAS) has been reported to demand considerable amounts of energy, mainly due to the difficulty of oxidizing such compound. As it is well known, Plasma-enhanced atomic layer deposition (PEALD) is able to improve the oxidation efficiency even under low process temperatures. Owing to that, PEALD can be considered as a very promising technique for the deposition of SiOx coatings. In this work, it has been investigated the deposition of silicon oxide films using TDMAS at 150°C. It has been evaluated the effect of the plasma oxidation time (6 to 18 s) and of the atmosphere composition (pure O2 or O2+Ar) on the chemical structure, elemental composition and chemical bonding state of the films. Increasing the plasma oxidation time in pure O2 resulted in larger proportion of retained C (Si-CH3) whereas N was preserved in the structure (Si-N). on the other hand, the formation of SiOx films from TDMAS is favored in shorter oxidation times in O2 + Ar plasmas.