In this paper we present methodology for precise calibration of Molecular Beam Epitaxy (MBE) growth process and achieving run to run stability of growth parameters. We present the analysis of the influence of fluxes stability during the growth of long wavelength quantum cascade laser structures designed for the range λ ~ 12–16 µm on wavelength accuracy with respect to desired emission wavelength. The active region of the lasers has a complex structure of nanometer thickness InxGa1-xAs/InyAl1-yAs superlattice. As a consequence, the compositional and thickness control of the structure via bulk growth parameters is rather difficult. To deal with this problem we employ methodology based on double-superlattice test structures, that precede the growth of the actual structures. The test structures are analyzed by high-resolution X-ray diffraction which allows to calibrate the growth of the complex active region of quantum cascade laser structures. We also study theoretically the effect of individual flux changes on emission wavelength and gain parameters of the laser. The results of simulations allow for determination of flux stability tolerance, preserving acceptable parameters of the laser and provide means of emission wavelength control. The proposed methodology was verified by the growth of laser structures for emission at around 13.5 μm.

We investigate molecular beam epitaxy growth conditions of micrometers-thick In0.52Al0.48As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. Effect of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditions which were developed for the growth of cascaded In0.53Ga0.47As/In0.52Al0.48As active region, e.g. growth temperature of TG=520°C and V/III ratio of 12, turned out to be not optimum for the growth of thick In0.52Al0.48As waveguide layers. It has been observed that after exceeding ~1µm thickness the quality of In0.52Al0.48As layers deteriorates. The in-situ optical reflectometry showed increasing surface roughness caused by defect forming, which was further confirmed by High Resolution X-Ray reciprocal space mapping, optical microscopy and atomic force microscopy. The presented optimization of growth conditions of In0.52Al0.48As waveguide layer led to the growth of defect free material, with good optical quality. This has been achieved by decreasing the growth temperature to TG=480 °C with appropriate increasing V/III ratio. At the same time the growth conditions of the cascade active region of the laser were left unchanged. The lasers grown using new recipe have shown lower threshold currents and improved slope efficiency. We relate this performance improvement to reduction of the electron scattering on the interface roughness and decreased waveguide absorption losses.