Review of Innovative MOSFET Architectures for Low Power and High Performance Applications

Semiconductor devices are pivotal technologies for almost all existing industrial sectors, as demonstrated by the recent chips shortages. The limits in scaling, performance and power consumption of electronic components, combined with the strong growth of ICT share in global electrical energy consumption, have put forward the need for alternative solutions. In this respect, innovative and disruptive device architectures have played a decisive role over the past 15 years and will continue to do so for future electronic circuits and systems. In this regard, FDSOI, multi-gate devices, nanowires, 2D devices, and 3D device architectures have shown promising electrical properties for many applications. This paper will review and compare innovative MOSFET architectures which are and will be needed for advanced electronic systems, like FDSOI, FinFET, Gate-All-Around, Nanosheets, Forksheet, CFET, and will address potential novel MOS Transistors with other disruptive architectures recently proposed for future high performance and/or low power ICs, such as the GAIA (Gate-All-Inside-and-Around) MOSFET.