Submitted:
04 March 2025
Posted:
06 March 2025
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Abstract
Self-cleaning solar mirrors coatings are targeted at reducing the amount of cleaning water, saving on the costs of solar fields ordinary maintenance and therefore on costs of electricity produced with concentrated solar technology. Different approaches have been tailored for mirrors of BSM and FSM architectures, having in common that the self-cleaning coating is the last layer exposed to fouling, a sort of solar mirror “skin”. The most recent trend in this sector is to give this skin sensing properties, so that it can self-diagnose its performance in terms of soiling and/or failure toward the ambitious goal of solar field and CSP digitalization. Starting from the previous results about auxetic aluminum nitrides and ZnO transparent composites developed for substituting alumina as BSM self-cleaning skin, here it has been explored the possibility of conferring sensing properties to this skin, by means of utilizing their piezoelectric properties, that can be correlated to dust dep-osition and hence to the soiling of the surface, and/or electrical their resistive behavior that can be useful for monitoring failure event. Good d33 values obtained for the sputtered piezoelectric AlN and tailored electrical properties of ZnO composites, combined to self-cleaning effect and optical clarity in the full solar range, enable the utilization of produced coatings as potential self-aware solar mirrors skin.
Keywords:
1. Introduction
2. Materials and Methods
3. Results and discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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| Sample | Power target (W) |
Pressure (Pa) |
Ar flux (sccm) |
N2 flux (sccm) |
Thickhness (nm) |
WCA (°) |
|---|---|---|---|---|---|---|
| AlNpiezo | P=3600W | 0.4 | 200 | 70 | 341±1.5 | 95.3±1.0 |
| I=5.90A | ||||||
| V=618V | ||||||
| AlNaux | P=1800W | 4 | 200 | 90 | 96.1±0.3 | 100.8±2 |
| I=6.8A | ||||||
| V=269V | ||||||
| AlNam | P=1800W | 2.4 | 200 | 70 | 219.5±0.5 | 90.3±1.0 |
| I=6.80A | ||||||
| V=270V |
| Sample | Power ZnO target [W] |
Power Si target [W] |
Pressure (Pa) | Reaction temperature [°C] |
Thickhness [nm] | WCA (°) |
|---|---|---|---|---|---|---|
| C 1-4 | 1000 | 400 | 0.5 | 560 | 310 | 94.4 ± 0.7 |
| C 85-4 | 850 | 400 | 0.5 | 560 | 300 | 94.4 ± 0.7 |
| C 85-45 | 850 | 450 | 2.0 | 560 | 320 | 93.4 ± 1.2 |
| C 85-45 b | 850 | 450 | 2.0 | 450 | 280 | 96.8 ± 1.1 |
| Sample | ρ║ [Ω cm] | ρ ┴ [Ω cm] | c-ZnO |
|---|---|---|---|
| C-1-4 | 16 | 4.7 * 104 | present |
| C-85-4 | 1.6 * 108 | 1.4 * 105 | not present |
| C-85-45 | 2.6 * 107 | 2.1 * 104 | not present |
| C-85-45b | 5 | 1.8 * 103 | present |
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